 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage G E D G H K J L M SOT-23 Dim A D TOP VIEW S B C Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 A B C D E G H J K L M Mechanical Data * * * * * Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: S70, K70 Weight: 0.008 grams (approx.) All Dimensions in mm Maximum Ratings Drain-Source Voltage @ TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Continuous VGSS ID Pd RqJA Tj, TSTG BS870 60 60 20 250 310 400 -55 to +150 Units V V V mA mW K/W C Characteristic Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage Drain Current (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time @ TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 3/4 3/4 1.0 3/4 3/4 80 3/4 3/4 3/4 3/4 3/4 Typ 80 3/4 3/4 2.0 3.5 1.0 3/4 22 11 2.0 2.0 5.0 Max 3/4 0.5 10 3.0 5.0 0.5 3/4 50 25 5.0 20 20 Unit V A nA V W A mS pF pF pF ns ns VES = 10V, RL = 150W, VDS = 10V, RD = 100W VDS = 10V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 100mA VDS = 25V, VGS = 0V VGS = 15V, VDS = 0V VDS = VGS, ID =-250mA VGS = 10V, ID = 0.2A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A Note: 1. Valid provided that terminals are kept at specified ambient temperature. 2. Pulse width 300ms, duty cycle 2%. DS11302 Rev. G-2 1 of 2 BS870 1.0 0.8 ID, DRAIN-SOURCE CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.6 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 7 Tj = 25C 6 5 VGS = 5.0V 5.5V 4 3 2 1 0 5.0V 0.4 VGS = 10V 0.2 0 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current 2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 5 4 ID = 50mA 1.5 VGS = 10V, ID = 0.5A RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 500mA 1.0 VGS = 5.0V, ID = 0.05A 3 2 0.5 1 0 0 -55 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage DS11302 Rev. G-2 2 of 2 BS870 |
Price & Availability of BS870
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |